Micron Technology, Inc. Memory M29W256GH7AZS6E

Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)
  • Memory - M29W256GH7AZS6E - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - M29W256GH7AZS6E - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W256GH7AZS6E - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M29W256GH7AZS6E
Memory M29W256GH7AZS6E
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 256Mbit Parallel 70 ns 64-FBGA (11x13)

Buy Now Datasheet
Memory - M29W256GH7AZS6E - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
M29W256GH7AZS6E
Memory M29W256GH7AZS6E
IC FLASH 256MBIT PARALLEL 64FBGA

IC FLASH 256MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number M29W256GH7AZS6E M29W256GH7AZS6E
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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