Micron Technology, Inc. Memory M29W160EB80ZA3SE TR

Description
IC FLASH 16MBIT PARALLEL 48TFBGA
Datasheet
Description
IC FLASH 16MBIT PARALLEL 48TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 16MBIT PARALLEL 48TFBGA

IC FLASH 16MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Memory - M29W160EB80ZA3SE TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 16Mbit Parallel 80 ns 48-TFBGA (6x8)

FLASH - NOR Memory IC 16Mbit Parallel 80 ns 48-TFBGA (6x8)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number M29W160EB80ZA3SE TR M29W160EB80ZA3SE TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 80 ns 80 ns
Density 16000 kbits 16000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28C17A-25I/L - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 250 ns
Density 16 kbits
View Details
Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 448-S25FL064LABBHA023TR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
4 suppliers
SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers