Micron Technology, Inc. Memory M29W128GSH70N6E

Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W128GSH70N6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

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IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M29W128GSH70N6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W128GSH70N6E
Integrated Circuits (ICs) - Memory - Memory M29W128GSH70N6E
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W128GSH70N6E M29W128GSH70N6E M29W128GSH70N6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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