Micron Technology, Inc. Memory M29W128GL70ZA6F TR

The M29W128GL70ZA6F TR is a 128Mbit Parallel NOR Flash memory device from Quarktwin Technology Ltd. It operates at a supply voltage of 2.7V to 3.6V for program, erase, and read functions, with I/O buffers supporting 1.65V to 3.6V. The device features a page size of 8 words (16 bytes) and offers asynchronous random/page read access times of 25 to 30ns for page access and 60 to 80ns for random access. It includes a 32-word write buffer for fast programming and supports enhanced buffered program commands for 256-word operations. The memory organization consists of 128 uniform blocks, each 128Kbytes or 64Kwords in size. It has a program time of 16¬µs per byte/word and a chip program time of 5 seconds with fast programming voltage (V_PPH) and 8 seconds without it. The device supports program/erase suspend and resume capabilities, allowing reads from any block during a program suspend operation and reads or programming of another block during an erase suspend operation. The M29W128GL70ZA6F TR is designed for low power consumption and is compliant with RoHS standards. It is available in a 64-ball TBGA package measuring 10mm x 13mm and is rated for automotive applications with a temperature range of -40¬8C to +125¬8C. The device also features various protection mechanisms, including software protection and a permanent identification block.