Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M29W128GL70ZA3E

Description
IC FLASH 128MBIT PARALLEL 64TBGA
Datasheet
Description
IC FLASH 128MBIT PARALLEL 64TBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W128GL70ZA3E
Integrated Circuits (ICs) - Memory - Memory M29W128GL70ZA3E
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site Datasheet
Memory - M29W128GL70ZA3E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W128GL70ZA3E M29W128GL70ZA3E M29W128GL70ZA3E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Cycle Time 70 ns
Density 128000 kbits 128000 kbits 128000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 593995-002-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - AS5C4008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details