Micron Technology, Inc. Memory M29W128GL60ZA6E

Description
FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-TBGA (10x13)
Datasheet
Description
FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-TBGA (10x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W128GL60ZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-TBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 60 ns 64-TBGA (10x13)

Buy Now Datasheet
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W128GL60ZA6E
Integrated Circuits (ICs) - Memory - Memory M29W128GL60ZA6E
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W128GL60ZA6E M29W128GL60ZA6E M29W128GL60ZA6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 60 ns 60 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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