Micron Technology, Inc. Memory M29W128GH7AZA6E

Description
IC FLASH 128MBIT PARALLEL 64TBGA
Datasheet
Description
IC FLASH 128MBIT PARALLEL 64TBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site Datasheet
Memory - M29W128GH7AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number M29W128GH7AZA6E M29W128GH7AZA6E
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 70 ns 70 ns
Density 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 27S185DM/B - Lingto Electronic Limited
Rochester Electronics
View Details
2 suppliers
IC 8 BIT A/D MOD FLASH 20-SSOP - 815-TLC0820ACDBR - Utmel Electronic Limited
Specs
Memory Category Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type SSOP; 20-SSOP (0.209, 5.30mm Width)
View Details