Micron Technology, Inc. 3V 3.3V Memory IC and Storage Component M29W128GH70ZA6E

Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray Product overview: M29W128GH70ZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M29W128GH70ZA6E can be used for catalog matching and distributor lookup.
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Description
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray Product overview: M29W128GH70ZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M29W128GH70ZA6E can be used for catalog matching and distributor lookup.
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Suppliers

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Supplier Links
3V 3.3V Memory IC and Storage Component - 774-M29W128GH70ZA6E - ERSAELECTRONICS PTE. LTD.
Singapore
3V 3.3V Memory IC and Storage Component
774-M29W128GH70ZA6E
3V 3.3V Memory IC and Storage Component 774-M29W128GH70ZA6E
NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray Product overview: M29W128GH70ZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M29W128GH70ZA6E can be used for catalog matching and distributor lookup.

NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 70ns 64-Pin TBGA Tray Product overview: M29W128GH70ZA6E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3V, 3.3V. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 3V, 3.3V, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-M29W128GH70ZA6E can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  ERSAELECTRONICS PTE. LTD.
Product Category Memory Chips
Product Number 774-M29W128GH70ZA6E
Product Name 3V 3.3V Memory IC and Storage Component
Memory Category Flash
Access Time 70 ns
Endurance 100000 Write/Erase Cycles
Operating Temperature -40 C (-40 F)
Density 128000 kbits
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