Micron Technology, Inc. Memory M29W128FL70N6F TR

Description
IC FLASH 128MBIT PARALLEL 56TSOP
Description
IC FLASH 128MBIT PARALLEL 56TSOP

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Description
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IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

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Memory - M29W128FL70N6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

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Integrated Circuits (ICs) - Memory - Memory - M29W128FL70N6F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W128FL70N6F TR
Integrated Circuits (ICs) - Memory - Memory M29W128FL70N6F TR
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W128FL70N6F TR M29W128FL70N6F TR M29W128FL70N6F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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