Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M29W128FL70N6F TR

Description
IC FLASH 128MBIT PARALLEL 56TSOP
Description
IC FLASH 128MBIT PARALLEL 56TSOP

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - M29W128FL70N6F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W128FL70N6F TR
Integrated Circuits (ICs) - Memory - Memory M29W128FL70N6F TR
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site
Memory - M29W128FL70N6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

Buy Now
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W128FL70N6F TR M29W128FL70N6F TR M29W128FL70N6F TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Cycle Time 70 ns
Density 128000 kbits 128000 kbits 128000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
 - LP3913SQ-AA/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type WQFN48
View Details
Specs
Memory Category Flash; FLASH
Cycle Time 96 ns
Density 64000 kbits
View Details