Micron Technology, Inc. Memory M29F800FB55M3E2

Description
FLASH - NOR Memory IC 8Mbit Parallel 55 ns 44-SO
Datasheet
Description
FLASH - NOR Memory IC 8Mbit Parallel 55 ns 44-SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29F800FB55M3E2 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 55 ns 44-SO

FLASH - NOR Memory IC 8Mbit Parallel 55 ns 44-SO

Buy Now Datasheet
IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F800FB55M3E2
Integrated Circuits (ICs) - Memory - Memory M29F800FB55M3E2
IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F800FB55M3E2 M29F800FB55M3E2 M29F800FB55M3E2
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 55 ns 55 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Density 8000 kbits 8000 kbits 8000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - 71016S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - 4347153 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details