Micron Technology, Inc. Memory M29F800DT70M6E

Description
IC FLASH 8MBIT PARALLEL 44SO
Datasheet
Description
IC FLASH 8MBIT PARALLEL 44SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F800DT70M6E
Integrated Circuits (ICs) - Memory - Memory M29F800DT70M6E
IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site
Memory - M29F800DT70M6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO

FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F800DT70M6E M29F800DT70M6E M29F800DT70M6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 70 ns 70 ns
Density 8000 kbits 8000 kbits 8000 kbits
Cycle Time 70 ns
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details
Memory - SMJ44C251B - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - QMP29GL512P11TAI020 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 512000 kbits
View Details
2 suppliers