Micron Technology, Inc. Memory M29F800DB70M6E

Description
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO
Datasheet
Description
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29F800DB70M6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO

FLASH - NOR Memory IC 8Mbit Parallel 70 ns 44-SO

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IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F800DB70M6E
Integrated Circuits (ICs) - Memory - Memory M29F800DB70M6E
IC FLASH 8MBIT PARALLEL 44SO

IC FLASH 8MBIT PARALLEL 44SO

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F800DB70M6E M29F800DB70M6E M29F800DB70M6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits
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