Micron Technology, Inc. Memory M29F800DB55N6E

Description
IC FLASH 8MBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 8MBIT PARALLEL 48TSOP
Datasheet

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Product
Description
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IC FLASH 8MBIT PARALLEL 48TSOP

IC FLASH 8MBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Memory - M29F800DB55N6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 55 ns 48-TSOP

FLASH - NOR Memory IC 8Mbit Parallel 55 ns 48-TSOP

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Integrated Circuits (ICs) - Memory - Memory - M29F800DB55N6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F800DB55N6E
Integrated Circuits (ICs) - Memory - Memory M29F800DB55N6E
IC FLASH 8MBIT PARALLEL 48TSOP

IC FLASH 8MBIT PARALLEL 48TSOP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F800DB55N6E M29F800DB55N6E M29F800DB55N6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 55 ns 55 ns
Density 8000 kbits 8000 kbits 8000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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