Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M29F800DB55N6E

Description
IC FLASH 8MBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 8MBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - M29F800DB55N6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F800DB55N6E
Integrated Circuits (ICs) - Memory - Memory M29F800DB55N6E
IC FLASH 8MBIT PARALLEL 48TSOP

IC FLASH 8MBIT PARALLEL 48TSOP

Supplier's Site
Memory - M29F800DB55N6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 55 ns 48-TSOP

FLASH - NOR Memory IC 8Mbit Parallel 55 ns 48-TSOP

Buy Now
IC FLASH 8MBIT PARALLEL 48TSOP

IC FLASH 8MBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F800DB55N6E M29F800DB55N6E M29F800DB55N6E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Cycle Time 55 ns
Density 8000 kbits 8000 kbits 8000 kbits
Supply Voltage Surface Mount 4.5V ~ 5.5V
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory IC and Storage Component - 736-DP8420V-33 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
5V Memory IC and Storage Component - 774-AS27C256-20JM - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers
Memory - 2161729 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details