Micron Technology, Inc. Memory M29F400BB55M6T TR

Description
IC FLASH 4MBIT PARALLEL 44SO
Description
IC FLASH 4MBIT PARALLEL 44SO

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 4MBIT PARALLEL 44SO

IC FLASH 4MBIT PARALLEL 44SO

Supplier's Site
Memory - M29F400BB55M6T TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 4Mbit Parallel 55 ns 44-SO

FLASH - NOR Memory IC 4Mbit Parallel 55 ns 44-SO

Buy Now
Integrated Circuits (ICs) - Memory - M29F400BB55M6T TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
M29F400BB55M6T TR
Integrated Circuits (ICs) - Memory M29F400BB55M6T TR
IC FLASH 4MBIT PARALLEL 44SO

IC FLASH 4MBIT PARALLEL 44SO

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F400BB55M6T TR M29F400BB55M6T TR M29F400BB55M6T TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 55 ns 55 ns 55 ns
Density 4000 kbits 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 60 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
5V Memory IC and Storage Component - 774-AM29F200BT-70EF - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 70 ns
Operating Temperature -40 C (-40 F)
View Details
Flash Memory - 1882557 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details