Micron Technology, Inc. Memory M29F200FT55M3F2 TR

Description
FLASH - NOR Memory IC 2Mbit Parallel 55 ns 44-SO
Datasheet
Description
FLASH - NOR Memory IC 2Mbit Parallel 55 ns 44-SO
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29F200FT55M3F2 TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 2Mbit Parallel 55 ns 44-SO

FLASH - NOR Memory IC 2Mbit Parallel 55 ns 44-SO

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F200FT55M3F2 TR
Integrated Circuits (ICs) - Memory - Memory M29F200FT55M3F2 TR
IC FLASH 2MBIT PARALLEL 44SO

IC FLASH 2MBIT PARALLEL 44SO

Supplier's Site
IC FLASH 2MBIT PARALLEL 44SO

IC FLASH 2MBIT PARALLEL 44SO

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F200FT55M3F2 TR M29F200FT55M3F2 TR M29F200FT55M3F2 TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 55 ns 55 ns
Operating Temperature -40 to 125 C (-40 to 257 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28298080 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - MT4C1004J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - S25FL164K0XBHI020 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Density 64000 kbits
View Details
SDRAM - 2420768 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details