Micron Technology, Inc. Memory M29F200BT70M6E

Description
IC FLASH 2MBIT PARALLEL 44SO
Datasheet
Description
IC FLASH 2MBIT PARALLEL 44SO
Datasheet

Suppliers

Company
Product
Description
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IC FLASH 2MBIT PARALLEL 44SO

IC FLASH 2MBIT PARALLEL 44SO

Supplier's Site Datasheet
Memory - M29F200BT70M6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 2Mbit Parallel 70 ns 44-SO

FLASH - NOR Memory IC 2Mbit Parallel 70 ns 44-SO

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29F200BT70M6E
Integrated Circuits (ICs) - Memory - Memory M29F200BT70M6E
IC FLASH 2MBIT PARALLEL 44SO

IC FLASH 2MBIT PARALLEL 44SO

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29F200BT70M6E M29F200BT70M6E M29F200BT70M6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 2000 kbits 2000 kbits 2000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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