Micron Technology, Inc. Memory M29DW323DB7AN6F TR

Description
IC FLASH 32MBIT PARALLEL 48TSOP
Datasheet
Description
IC FLASH 32MBIT PARALLEL 48TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 32MBIT PARALLEL 48TSOP

IC FLASH 32MBIT PARALLEL 48TSOP

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW323DB7AN6F TR
Integrated Circuits (ICs) - Memory - Memory M29DW323DB7AN6F TR
IC FLASH 32MBIT PAR 48TSOP I

IC FLASH 32MBIT PAR 48TSOP I

Supplier's Site
Memory - M29DW323DB7AN6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 32Mbit Parallel 70 ns 48-TSOP I

FLASH - NOR Memory IC 32Mbit Parallel 70 ns 48-TSOP I

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW323DB7AN6F TR M29DW323DB7AN6F TR M29DW323DB7AN6F TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Access Time 70 ns 70 ns
Density 32000 kbits 32000 kbits 32000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

FIFOs Memory - MPD23698RHA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - DA28F320J5A120 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 120 ns
Density 32000 kbits
View Details
Memory - 8611200993 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details