Micron Technology, Inc. Memory M29DW323DB5AN6F TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 55 ns 48-TSOP I
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 55 ns 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29DW323DB5AN6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 55 ns 48-TSOP I

FLASH - NOR Memory IC 256Mbit Parallel 55 ns 48-TSOP I

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW323DB5AN6F TR
Integrated Circuits (ICs) - Memory - Memory M29DW323DB5AN6F TR
IC FLASH 256MBIT PAR 48TSOP I

IC FLASH 256MBIT PAR 48TSOP I

Supplier's Site
IC FLASH 256MBIT PARALLEL 48TSOP

IC FLASH 256MBIT PARALLEL 48TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW323DB5AN6F TR M29DW323DB5AN6F TR M29DW323DB5AN6F TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 55 ns 55 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Specs
Memory Category Volatile
Density 0 kbits
Package Type 4.5 ns
View Details
Flash Memory - 1882794P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 323017-32WS 02 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers