Micron Technology, Inc. Memory M29DW128F70ZA6F TR

Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)
Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - M29DW128F70ZA6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 64-TBGA (10x13)

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Integrated Circuits (ICs) - Memory - Memory - M29DW128F70ZA6F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW128F70ZA6F TR
Integrated Circuits (ICs) - Memory - Memory M29DW128F70ZA6F TR
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site
IC FLASH 128MBIT PARALLEL 64TBGA

IC FLASH 128MBIT PARALLEL 64TBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW128F70ZA6F TR M29DW128F70ZA6F TR M29DW128F70ZA6F TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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