Micron Technology, Inc. Memory - Flash - JS28F512M29EWLB TR JS28F512M29EWLB TR

Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 131019-JS28F512M29EW LB TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Access Time: 110ns Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP (14x20) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Win Source Part Number: 131019-JS28F512M29EW LB TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Access Time: 110ns Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP (14x20) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - JS28F512M29EWLB TR - 131019-JS28F512M29EWLB TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - JS28F512M29EWLB TR
131019-JS28F512M29EWLB TR
Memory - Flash - JS28F512M29EWLB TR 131019-JS28F512M29EWLB TR
Manufacturer: Micron Technology Inc. Win Source Part Number: 131019-JS28F512M29EW LB TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 512Mb (64M x 8, 32M x 16) Access Time: 110ns Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP (14x20) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Win Source Part Number: 131019-JS28F512M29EWLB TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Access Time: 110ns
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 56-TSOP (14x20)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - JS28F512M29EWLBTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - JS28F512M29EWLB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F512M29EWLB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29EWLB TR
Integrated Circuits (ICs) - Memory - Memory JS28F512M29EWLB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 131019-JS28F512M29EWLB TR JS28F512M29EWLBTR-ND JS28F512M29EWLB TR JS28F512M29EWLB TR JS28F512M29EWLB TR
Product Name Memory - Flash - JS28F512M29EWLB TR Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 110 ns 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-S25FL128LAGBHV023TR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 128000 kbits
View Details
3 suppliers
 - 93L422DM - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type DIP; CDIP22
View Details
3 suppliers
Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details