Micron Technology, Inc. Memory JS28F512M29EWHB TR

Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29EWHBTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - JS28F512M29EWHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F512M29EWHB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29EWHB TR
Integrated Circuits (ICs) - Memory - Memory JS28F512M29EWHB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number JS28F512M29EWHBTR-ND JS28F512M29EWHB TR JS28F512M29EWHB TR JS28F512M29EWHB TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash Flash; Flash Flash; FLASH Flash; Non-Volatile
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
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