Micron Technology, Inc. Memory JS28F512M29EWHB TR

Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29EWHBTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F512M29EWHB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29EWHB TR
Integrated Circuits (ICs) - Memory - Memory JS28F512M29EWHB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
Memory - JS28F512M29EWHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number JS28F512M29EWHBTR-ND JS28F512M29EWHB TR JS28F512M29EWHB TR JS28F512M29EWHB TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Flash Flash; Non-Volatile Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - IS29GL256S-10DHB01-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - 24C02A-E/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 2 kbits
View Details
Flash Memory - 1882551 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details