Micron Technology, Inc. Memory JS28F512M29EBHB TR

Description
IC FLASH 512MBIT PARALLEL 56TSOP
Description
IC FLASH 512MBIT PARALLEL 56TSOP

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IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

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Memory - JS28F512M29EBHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number JS28F512M29EBHB TR JS28F512M29EBHB TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 512000 kbits 512000 kbits
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