Micron Technology, Inc. Memory JS28F512M29EBHB TR

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29EBHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number JS28F512M29EBHB TR JS28F512M29EBHB TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL128S-10DHV01 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 128000 kbits
View Details
2 suppliers
Dual Memory IC and Storage Component - 774-MT5C1008DCJ-45/IT - ERSAELECTRONICS PTE. LTD.
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Address Bus Width 17 bits
View Details
2 suppliers
Memory - AT49BV4096A-90TI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 90 ns
Density 4000 kbits
View Details
SDRAM - 2420776 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details