Micron Technology, Inc. Memory JS28F512M29EBHB TR

Description
IC FLASH 512MBIT PARALLEL 56TSOP
  • Memory - JS28F512M29EBHB TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - JS28F512M29EBHB TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 512MBIT PARALLEL 56TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29EBHB TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
JS28F512M29EBHB TR
Memory JS28F512M29EBHB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
Memory - JS28F512M29EBHB TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
JS28F512M29EBHB TR
Memory JS28F512M29EBHB TR
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number JS28F512M29EBHB TR JS28F512M29EBHB TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 512000 kbits 512000 kbits
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