Micron Technology, Inc. Memory JS28F512M29AWLB TR

Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP
Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29AWLB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

Buy Now
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29AWLB TR
Integrated Circuits (ICs) - Memory - Memory JS28F512M29AWLB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JS28F512M29AWLB TR JS28F512M29AWLB TR JS28F512M29AWLB TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - SN74ACT7202LA35RJ - Rochester Electronics
Specs
Memory Category FIFO
Package Type PLCC; PLCC32
View Details
2 suppliers
Memory - 7164L25DB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 64 kbits
View Details
 - S25FL064LABNFI010 - Rochester Electronics
Specs
Memory Category Flash
Package Type PG-WSON-8
View Details
6 suppliers
Memory - MYX4DD3K128M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details