Micron Technology, Inc. Memory JS28F512M29AWHB TR

Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP
  • Memory - JS28F512M29AWHB TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - JS28F512M29AWHB TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29AWHB TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
JS28F512M29AWHB TR
Memory JS28F512M29AWHB TR
FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 100 ns 56-TSOP

Buy Now
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29AWHB TR
Integrated Circuits (ICs) - Memory - Memory JS28F512M29AWHB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
Memory - JS28F512M29AWHB TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
JS28F512M29AWHB TR
Memory JS28F512M29AWHB TR
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JS28F512M29AWHB TR JS28F512M29AWHB TR JS28F512M29AWHB TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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