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Micron Technology, Inc. Memory JS28F256M29EBHB TR

Description

FLASH - NOR Memory IC 256Mbit Parallel 110 ns 56-TSOP

Quarktwin Technology Ltd.
Lingto Electronic Limited

Description

FLASH - NOR Memory IC 256Mbit Parallel 110 ns 56-TSOP

Suppliers

Company

Product

Description

Supplier Links

Memory - JS28F256M29EBHB TR - Quarktwin Technology Ltd.

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
JS28F256M29EBHB TR

Memory JS28F256M29EBHB TR

FLASH - NOR Memory IC 256Mbit Parallel 110 ns 56-TSOP

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Memory - JS28F256M29EBHB TR - Lingto Electronic Limited

Lingto Electronic Limited

Shenzhen, China

Memory
JS28F256M29EBHB TR

Memory JS28F256M29EBHB TR

IC FLASH 256MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	JS28F256M29EBHB TR	JS28F256M29EBHB TR
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash
Access Time	110 ns	110 ns
Operating Temperature	-40 to 85 C (-40 to 185 F)

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