Micron Technology, Inc. Memory JS28F256J3F105B TR

Description
FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 105ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 105ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F256J3F105BTR-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 105ns 56-TSOP

FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Parallel 105ns 56-TSOP

Buy Now Datasheet
Memory - Flash - JS28F256J3F105B TR - 144221-JS28F256J3F105B TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - JS28F256J3F105B TR
144221-JS28F256J3F105B TR
Memory - Flash - JS28F256J3F105B TR 144221-JS28F256J3F105B TR
Manufacturer: Micron Technology Inc. Win Source Part Number: 144221-JS28F256J3F10 5B TR Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NOR Memory Size: 256Mb (32M x 8, 16M x 16) Access Time: 105ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 56-TSOP (14x20) Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Win Source Part Number: 144221-JS28F256J3F105B TR
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Access Time: 105ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 56-TSOP (14x20)
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F256J3F105B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F256J3F105B TR
Integrated Circuits (ICs) - Memory - Memory JS28F256J3F105B TR
IC FLASH 256MBIT PARALLEL 56TSOP

IC FLASH 256MBIT PARALLEL 56TSOP

Supplier's Site
IC FLASH 256MBIT PARALLEL 56TSOP

IC FLASH 256MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - JS28F256J3F105B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 105 ns 56-TSOP

FLASH - NOR Memory IC 256Mbit Parallel 105 ns 56-TSOP

Buy Now

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number JS28F256J3F105BTR-ND 144221-JS28F256J3F105B TR JS28F256J3F105B TR JS28F256J3F105B TR JS28F256J3F105B TR
Product Name Memory Memory - Flash - JS28F256J3F105B TR Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 043641RLAD-6 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3 ns
Density 4500 kbits
View Details
Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
Memory - IS29GL01GS-11DHB02-TR - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
 - 9403ASDMQB - Rochester Electronics
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers