The JS28F00AP33BF0 is a 1Gb Parallel NOR Flash memory device from Quarktwin Technology Ltd., designed for high-performance applications. It features a 105ns initial access time and supports a 16-word asynchronous page read mode, with a maximum synchronous burst read speed of 52 MHz. The device operates with a core voltage range of 2.3V to 3.6V and has a typical standby current of 75¬µA. This memory device utilizes a multi-level cell (MLC) architecture, providing high density at a lower cost. It includes a buffered enhanced factory programming capability at 2 MB/s using a 512-word buffer, and supports various programming and erasing operations with a minimum of 100,000 erase cycles per block. The JS28F00AP33BF0 is available in a 56-lead TSOP package and is compliant with JESD47 standards, making it suitable for a wide range of industrial applications with an operating temperature range of -40¬8C to +85¬8C. Engineers considering this product should evaluate its specifications against their project requirements, particularly in terms of speed, power consumption, and packaging options.
FLASH - NOR Memory IC 1Gb (64M x 16) Parallel 40MHz 105ns 56-TSOP
IC FLASH 1GBIT PAR 56TSOP Product overview: JS28F00AP33BF0 from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-JS28F00AP33BF0 can be used for catalog matching and distributor lookup.
IC FLASH 1GBIT PAR 56TSOP
IC FLASH 1GBIT PARALLEL 56TSOP
FLASH - NOR Memory IC 1Gbit Parallel 40 MHz 105 ns 56-TSOP
| DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | JS28F00AP33BF0-ND | 774-JS28F00AP33BF0 | JS28F00AP33BF0 | JS28F00AP33BF0 | JS28F00AP33BF0 |
| Product Name | Memory | Memory IC and Storage Component | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Flash | Flash; Non-Volatile | Flash; Non-Volatile | Flash; Flash | Flash; FLASH |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Package Type | "56-TFSOP (0.724"", 18.40mm Width)" | Tray | 56-TFSOP (0.724\", 18.40mm Width) | ||
| Supply Voltage | 2.3V ~ 3.6V | 3.6V; 2.3V ~ 3.6V | -40degC ~ 85degC (TA) | 3.6V; 2.3V ~ 3.6V |
