Micron Technology, Inc. Memory JS28F00AM29EWHE

Description
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F00AM29EWHE-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
Memory IC and Storage Component - 774-JS28F00AM29EWHE - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-JS28F00AM29EWHE
Memory IC and Storage Component 774-JS28F00AM29EWHE
IC FLASH 1GBIT PARALLEL 56TSOP Product overview: JS28F00AM29EWHE from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-JS28F00AM29EWHE can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 56TSOP Product overview: JS28F00AM29EWHE from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-JS28F00AM29EWHE can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - Flash - JS28F00AM29EWHE - 753875-JS28F00AM29EWHE - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - JS28F00AM29EWHE
753875-JS28F00AM29EWHE
Memory - Flash - JS28F00AM29EWHE 753875-JS28F00AM29EWHE
Manufacturer: Micron Technology Inc. Win Source Part Number: 753875-JS28F00AM29EW HE Packaging: Tray Mounting Style: SMD Technology: FLASH - NOR Memory Type: Non-Volatile Memory Size: 1Gb (128M x 8, 64M x 16) Access Time: 110ns Categories: Integrated Circuits Supplier Device Package: 56-TSOP Status: Obsolete Temperature Range - Operating: -40°C ~ 85°C Memory Format: FLASH Write Cycle Time - Word, Page: 110ns Memory Interface: Parallel Manufacturer Package: 56-TFSOP (0.724", 18.40mm Width) Popularity: Low Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 96 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V

Manufacturer: Micron Technology Inc.
Win Source Part Number: 753875-JS28F00AM29EWHE
Packaging: Tray
Mounting Style: SMD
Technology: FLASH - NOR
Memory Type: Non-Volatile
Memory Size: 1Gb (128M x 8, 64M x 16)
Access Time: 110ns
Categories: Integrated Circuits
Supplier Device Package: 56-TSOP
Status: Obsolete
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: FLASH
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Manufacturer Package: 56-TFSOP (0.724", 18.40mm Width)
Popularity: Low
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 96
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V

Buy Now
Memory - JS28F00AM29EWHE - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F00AM29EWHE - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F00AM29EWHE
Integrated Circuits (ICs) - Memory - Memory JS28F00AM29EWHE
IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site
IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number JS28F00AM29EWHE-ND 774-JS28F00AM29EWHE 753875-JS28F00AM29EWHE JS28F00AM29EWHE JS28F00AM29EWHE JS28F00AM29EWHE
Product Name Memory Memory IC and Storage Component Memory - Flash - JS28F00AM29EWHE Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type "56-TFSOP (0.724"", 18.40mm Width)" Tray 56-TFSOP (0.724\", 18.40mm Width)
Supply Voltage 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V Surface Mount
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