Micron Technology, Inc. Memory JS28F00AM29EBHB TR

Description
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP
Description
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F00AM29EBHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

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IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - JS28F00AM29EBHB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F00AM29EBHB TR
Integrated Circuits (ICs) - Memory - Memory JS28F00AM29EBHB TR
IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JS28F00AM29EBHB TR JS28F00AM29EBHB TR JS28F00AM29EBHB TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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