Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory JS28F00AM29EBHB TR

Description
IC FLASH 1GBIT PARALLEL 56TSOP
Description
IC FLASH 1GBIT PARALLEL 56TSOP

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - JS28F00AM29EBHB TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F00AM29EBHB TR
Integrated Circuits (ICs) - Memory - Memory JS28F00AM29EBHB TR
IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site
Memory - JS28F00AM29EBHB TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 1Gbit Parallel 110 ns 56-TSOP

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IC FLASH 1GBIT PARALLEL 56TSOP

IC FLASH 1GBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number JS28F00AM29EBHB TR JS28F00AM29EBHB TR JS28F00AM29EBHB TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Cycle Time 110 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Supply Voltage Surface Mount 3.6V; 2.7V ~ 3.6V
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