Micron Technology, Inc. Memory EDF8164A3MA-JD-F-D

Description
IC DRAM 8GBIT PARALLEL 253FBGA
  • Memory - EDF8164A3MA-JD-F-D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - EDF8164A3MA-JD-F-D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC DRAM 8GBIT PARALLEL 253FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EDF8164A3MA-JD-F-D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
EDF8164A3MA-JD-F-D
Memory EDF8164A3MA-JD-F-D
IC DRAM 8GBIT PARALLEL 253FBGA

IC DRAM 8GBIT PARALLEL 253FBGA

Supplier's Site Datasheet
Memory - EDF8164A3MA-JD-F-D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
EDF8164A3MA-JD-F-D
Memory EDF8164A3MA-JD-F-D
SDRAM - Mobile LPDDR3 Memory IC 8Gbit Parallel 933 MHz 253-FBGA (11x11)

SDRAM - Mobile LPDDR3 Memory IC 8Gbit Parallel 933 MHz 253-FBGA (11x11)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number EDF8164A3MA-JD-F-D EDF8164A3MA-JD-F-D
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5LC512K8 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5LC512K8
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060431
View Details
Memory IC and Storage Component - 774-29705APC - ERSAELECTRONICS PTE. LTD.
Rochester Electronics
Memory IC and Storage Component
29705APC
Specs
Memory Category SRAM Chip
Package Type Bulk
View Details
4 suppliers
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Texas Instruments
Memory
S29GL032N11TFIV10
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details