Micron Technology, Inc. Memory EDB8164B4PT-1DIT-F-D

Description
IC DRAM 8GBIT PARALLEL 216FBGA
  • Memory - EDB8164B4PT-1DIT-F-D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Memory IC and Storage Component - 774-EDB8164B4PT-1DIT-F-D - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - SDRAM - EDB8164B4PT-1DIT-F-D - 917826-EDB8164B4PT-1DIT-F-D - Win Source Electronics
    Win Source Electronics
  • Memory - EDB8164B4PT-1DIT-F-D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - EDB8164B4PT-1DIT-F-D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Dram, 128M X 64Bit, -40 To 85Deg C; Dram Type Micron - 80AH6067 - Newark, An Avnet Company
    Newark, An Avnet Company
Request a Quote Datasheet
Description
IC DRAM 8GBIT PARALLEL 216FBGA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - EDB8164B4PT-1DIT-F-D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
EDB8164B4PT-1DIT-F-D
Memory EDB8164B4PT-1DIT-F-D
IC DRAM 8GBIT PARALLEL 216FBGA

IC DRAM 8GBIT PARALLEL 216FBGA

Supplier's Site Datasheet
Memory IC and Storage Component - 774-EDB8164B4PT-1DIT-F-D - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-EDB8164B4PT-1DIT-F-D
Memory IC and Storage Component 774-EDB8164B4PT-1DIT-F-D
IC DRAM 8GBIT PAR 216FBGA Product overview: EDB8164B4PT-1DIT-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB8164B4PT-1DIT -F-D can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PAR 216FBGA Product overview: EDB8164B4PT-1DIT-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB8164B4PT-1DIT-F-D can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - SDRAM - EDB8164B4PT-1DIT-F-D - 917826-EDB8164B4PT-1DIT-F-D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - EDB8164B4PT-1DIT-F-D
917826-EDB8164B4PT-1DIT-F-D
Memory - SDRAM - EDB8164B4PT-1DIT-F-D 917826-EDB8164B4PT-1DIT-F-D
Manufacturer: Micron Technology Inc. Win Source Part Number: 917826-EDB8164B4PT-1 DIT-F-D Operating Temperature Range: -40°C ~ 85°C (TC) Features: SDRAM - Mobile LPDDR2 Memory IC 8Gb (128M x 64) Parallel 533 MHz 216-FBGA (12x12) Package: 216-WFBGA Package: Tray Mounting: Surface Mount Family Name: EDB8164 Categories: Integrated Circuits (ICs) Case / Package: 216-FBGA (12x12) ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance Quantity per package: 1680 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 35 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0036

Manufacturer: Micron Technology Inc.
Win Source Part Number: 917826-EDB8164B4PT-1DIT-F-D
Operating Temperature Range: -40°C ~ 85°C (TC)
Features: SDRAM - Mobile LPDDR2 Memory IC 8Gb (128M x 64) Parallel 533 MHz 216-FBGA (12x12)
Package: 216-WFBGA
Package: Tray
Mounting: Surface Mount
Family Name: EDB8164
Categories: Integrated Circuits (ICs)
Case / Package: 216-FBGA (12x12)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 1680
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036

Buy Now Datasheet
Memory - EDB8164B4PT-1DIT-F-D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
EDB8164B4PT-1DIT-F-D
Memory EDB8164B4PT-1DIT-F-D
IC DRAM 8GBIT PARALLEL 216FBGA

IC DRAM 8GBIT PARALLEL 216FBGA

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB8164B4PT-1DIT-F-D
Integrated Circuits (ICs) - Memory - Memory EDB8164B4PT-1DIT-F-D
IC DRAM 8GBIT PAR 216FBGA

IC DRAM 8GBIT PAR 216FBGA

Supplier's Site
Memory - EDB8164B4PT-1DIT-F-D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
EDB8164B4PT-1DIT-F-D
Memory EDB8164B4PT-1DIT-F-D
SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 533 MHz 216-FBGA (12x12)

SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 533 MHz 216-FBGA (12x12)

Buy Now
Dram, 128M X 64Bit, -40 To 85Deg C; Dram Type Micron - 80AH6067 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 128M X 64Bit, -40 To 85Deg C; Dram Type Micron
80AH6067
Dram, 128M X 64Bit, -40 To 85Deg C; Dram Type Micron 80AH6067
DRAM, 128M X 64BIT, -40 TO 85DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:128M x 64bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:216Pins; Supply Voltage Nom:1.2V; Access Time:1.875ns RoHS Compliant: Yes

DRAM, 128M X 64BIT, -40 TO 85DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:128M x 64bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:216Pins; Supply Voltage Nom:1.2V; Access Time:1.875ns RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number EDB8164B4PT-1DIT-F-D 774-EDB8164B4PT-1DIT-F-D 917826-EDB8164B4PT-1DIT-F-D EDB8164B4PT-1DIT-F-D EDB8164B4PT-1DIT-F-D EDB8164B4PT-1DIT-F-D 80AH6067
Product Name Memory Memory IC and Storage Component Memory - SDRAM - EDB8164B4PT-1DIT-F-D Memory Integrated Circuits (ICs) - Memory - Memory Memory Dram, 128M X 64Bit, -40 To 85Deg C; Dram Type Micron
Memory Category SDRAM - Mobile LPDDR2; DRAM Chip Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip
Data Rate 533 MHz 533 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000000 kbits 8000000 kbits 8000000 kbits 8000000 kbits 8000000 kbits
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