IC DRAM 8GBIT PAR 216FBGA Product overview: EDB8164B4PT-1DAT-F-D
Win Source Part Number: 943316-EDB8164B4PT-1
Series: *
Categories: Memory
IC DRAM 8GBIT PAR 216FBGA
IC DRAM 8GBIT PARALLEL 216FBGA
DRAM, 128M X 64BIT, -40 TO 105DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:128M x 64bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:216Pins; Supply Voltage Nom:1.2V; Access Time:- RoHS Compliant: Yes
SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 533 MHz 216-FBGA (12x12)
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-EDB8164B4PT-1DAT-F-D | 943316-EDB8164B4PT-1DAT-F-D | EDB8164B4PT-1DAT-F-D | EDB8164B4PT-1DAT-F-D | 80AH6066 | EDB8164B4PT-1DAT-F-D |
| Product Name | Memory IC and Storage Component | Memory - DDR - EDB8164B4PT-1DAT-F-D | Integrated Circuits (ICs) - Memory - Memory | Memory | Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||||
| Package Type | BGA; Tray | WFBGA | BGA; 216-WFBGA | |||
| Supply Voltage | 1.14V ~ 1.95V | 216-WFBGA | 1.14V ~ 1.95V |