Micron Technology, Inc. Memory - DDR - EDB8164B4PT-1DAT-F-D EDB8164B4PT-1DAT-F-D

Description
Win Source Part Number: 943316-EDB8164B4PT-1 DAT-F-D Series: * Categories: Memory
  • Memory - DDR - EDB8164B4PT-1DAT-F-D - 943316-EDB8164B4PT-1DAT-F-D - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-EDB8164B4PT-1DAT-F-D - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron - 80AH6066 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - EDB8164B4PT-1DAT-F-D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - EDB8164B4PT-1DAT-F-D - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
Win Source Part Number: 943316-EDB8164B4PT-1 DAT-F-D Series: * Categories: Memory
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - EDB8164B4PT-1DAT-F-D - 943316-EDB8164B4PT-1DAT-F-D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - EDB8164B4PT-1DAT-F-D
943316-EDB8164B4PT-1DAT-F-D
Memory - DDR - EDB8164B4PT-1DAT-F-D 943316-EDB8164B4PT-1DAT-F-D
Win Source Part Number: 943316-EDB8164B4PT-1 DAT-F-D Series: * Categories: Memory

Win Source Part Number: 943316-EDB8164B4PT-1DAT-F-D
Series: *
Categories: Memory

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Memory IC and Storage Component - 774-EDB8164B4PT-1DAT-F-D - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-EDB8164B4PT-1DAT-F-D
Memory IC and Storage Component 774-EDB8164B4PT-1DAT-F-D
IC DRAM 8GBIT PAR 216FBGA Product overview: EDB8164B4PT-1DAT-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB8164B4PT-1DAT -F-D can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PAR 216FBGA Product overview: EDB8164B4PT-1DAT-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB8164B4PT-1DAT-F-D can be used for catalog matching and distributor lookup.

Supplier's Site
Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron - 80AH6066 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron
80AH6066
Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron 80AH6066
DRAM, 128M X 64BIT, -40 TO 105DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:128M x 64bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:216Pins; Supply Voltage Nom:1.2V; Access Time:- RoHS Compliant: Yes

DRAM, 128M X 64BIT, -40 TO 105DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:128M x 64bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:216Pins; Supply Voltage Nom:1.2V; Access Time:- RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - EDB8164B4PT-1DAT-F-D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
EDB8164B4PT-1DAT-F-D
Memory EDB8164B4PT-1DAT-F-D
SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 533 MHz 216-FBGA (12x12)

SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 533 MHz 216-FBGA (12x12)

Buy Now
Memory - EDB8164B4PT-1DAT-F-D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
EDB8164B4PT-1DAT-F-D
Memory EDB8164B4PT-1DAT-F-D
IC DRAM 8GBIT PARALLEL 216FBGA

IC DRAM 8GBIT PARALLEL 216FBGA

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB8164B4PT-1DAT-F-D
Integrated Circuits (ICs) - Memory - Memory EDB8164B4PT-1DAT-F-D
IC DRAM 8GBIT PAR 216FBGA

IC DRAM 8GBIT PAR 216FBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 943316-EDB8164B4PT-1DAT-F-D 774-EDB8164B4PT-1DAT-F-D 80AH6066 EDB8164B4PT-1DAT-F-D EDB8164B4PT-1DAT-F-D EDB8164B4PT-1DAT-F-D
Product Name Memory - DDR - EDB8164B4PT-1DAT-F-D Memory IC and Storage Component Dram, 128M X 64Bit, -40 To 105Deg C; Dram Type Micron Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type BGA; Tray WFBGA BGA; 216-WFBGA
Supply Voltage 1.14V ~ 1.95V 1.14V ~ 1.95V 216-WFBGA
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