Manufacturer: Micron Technology Inc.
Win Source Part Number: 917823-EDB8132B4PB-8
Operating Temperature Range: -30°C ~ 85°C (TC)
Features: SDRAM - Mobile LPDDR2 Memory IC 8Gb (256M x 32) Parallel 400 MHz 168-FBGA (12x12)
Package: 168-WFBGA
Package: Bulk
Mounting: Surface Mount
Family Name: EDB8132
Categories: Integrated Circuits (ICs)
Case / Package: 168-FBGA (12x12)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance
Quantity per package: 1680
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
IC DRAM 8GBIT PARALLEL 168FBGA Product overview: EDB8132B4PB-8D-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB8132B4PB-8D-F
IC DRAM 8GBIT PARALLEL 168FBGA
SDRAM - Mobile LPDDR2 Memory IC 8Gb (256M x 32) Parallel 400MHz 168-FBGA (12x12)
IC DRAM 8GBIT PARALLEL 168FBGA
IC DRAM 8GBIT PARALLEL 168FBGA
SDRAM - Mobile LPDDR2 Memory IC 8Gbit Parallel 400 MHz 168-FBGA (12x12)
DRAM, 256M X 32BIT, -30 TO 85DEG C; DRAM Type:LPDDR2; DRAM Density:8Gbit; DRAM Memory Configuration:256M x 32bit; Clock Frequency:400MHz; Memory Case Style:WFBGA; No. of Pins:168Pins; Supply Voltage Nom:1.2V; Access Time:2.5ns RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 917823-EDB8132B4PB-8D-F-D | 774-EDB8132B4PB-8D-F-D | EDB8132B4PB-8D-F-D | EDB8132B4PB-8D-F-D-ND | EDB8132B4PB-8D-F-D | EDB8132B4PB-8D-F-D | EDB8132B4PB-8D-F-D | 80AH6056 |
| Product Name | Memory - SDRAM - EDB8132B4PB-8D-F-D | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Dram, 256M X 32Bit, -30 To 85Deg C; Dram Type Micron |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | SDRAM - Mobile LPDDR2; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | |||
| Package Type | BGA; 168-FBGA (12x12) | BGA; Bulk | 168-WFBGA | 168-WFBGA | BGA; 168-WFBGA | WFBGA | ||
| Density | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | 8000000 kbits | ||
| Number of Words | 32000 k |
