Micron Technology, Inc. Memory EDB4432BBPE-1D-F-D

Description
IC DRAM 4GBIT PARALLEL 533MHZ
Datasheet
Description
IC DRAM 4GBIT PARALLEL 533MHZ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 4GBIT PARALLEL 533MHZ

IC DRAM 4GBIT PARALLEL 533MHZ

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB4432BBPE-1D-F-D
Integrated Circuits (ICs) - Memory - Memory EDB4432BBPE-1D-F-D
IC DRAM 4GBIT PARALLEL 533MHZ

IC DRAM 4GBIT PARALLEL 533MHZ

Supplier's Site
Memory - EDB4432BBPE-1D-F-D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 533 MHz

SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 533 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EDB4432BBPE-1D-F-D EDB4432BBPE-1D-F-D EDB4432BBPE-1D-F-D
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 774-S27KS0642GABHV020 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip; SRAM Chip
Access Time 35 ns
Operating Temperature -40 C (-40 F)
View Details
7 suppliers
Logic - Logic - FIFOs Memory - CD54HCT40105F3A - 1160037-CD54HCT40105F3A - Win Source Electronics
Specs
Memory Category FIFO
View Details
2 suppliers