Micron Technology, Inc. Memory - DDR - EDB4432BBBJ-1DAAT-F-D EDB4432BBBJ-1DAAT-F-D

Description
Win Source Part Number: 943158-EDB4432BBBJ-1 DAAT-F-D Series: * Categories: Memory
  • Memory - DDR - EDB4432BBBJ-1DAAT-F-D - 943158-EDB4432BBBJ-1DAAT-F-D - Win Source Electronics
    Win Source Electronics
  • Memory IC and Storage Component - 774-EDB4432BBBJ-1DAAT-F-D - ERSAELECTRONICS PTE. LTD.
    ERSAELECTRONICS PTE. LTD.
  • Memory - EDB4432BBBJ-1DAAT-F-D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - EDB4432BBBJ-1DAAT-F-D - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron - 80AH6046 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - EDB4432BBBJ-1DAAT-F-D - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
Win Source Part Number: 943158-EDB4432BBBJ-1 DAAT-F-D Series: * Categories: Memory
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - DDR - EDB4432BBBJ-1DAAT-F-D - 943158-EDB4432BBBJ-1DAAT-F-D - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - EDB4432BBBJ-1DAAT-F-D
943158-EDB4432BBBJ-1DAAT-F-D
Memory - DDR - EDB4432BBBJ-1DAAT-F-D 943158-EDB4432BBBJ-1DAAT-F-D
Win Source Part Number: 943158-EDB4432BBBJ-1 DAAT-F-D Series: * Categories: Memory

Win Source Part Number: 943158-EDB4432BBBJ-1DAAT-F-D
Series: *
Categories: Memory

Buy Now
Memory IC and Storage Component - 774-EDB4432BBBJ-1DAAT-F-D - ERSAELECTRONICS PTE. LTD.
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-EDB4432BBBJ-1DAAT-F-D
Memory IC and Storage Component 774-EDB4432BBBJ-1DAAT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA Product overview: EDB4432BBBJ-1DAAT-F- D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB4432BBBJ-1DAA T-F-D can be used for catalog matching and distributor lookup.

IC DRAM 4GBIT PARALLEL 134FBGA Product overview: EDB4432BBBJ-1DAAT-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB4432BBBJ-1DAAT-F-D can be used for catalog matching and distributor lookup.

Supplier's Site
Memory - EDB4432BBBJ-1DAAT-F-D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
EDB4432BBBJ-1DAAT-F-D
Memory EDB4432BBBJ-1DAAT-F-D
SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 533 MHz 134-FBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 533 MHz 134-FBGA (10x11.5)

Buy Now
Memory - EDB4432BBBJ-1DAAT-F-D - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Memory
EDB4432BBBJ-1DAAT-F-D
Memory EDB4432BBBJ-1DAAT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA

IC DRAM 4GBIT PARALLEL 134FBGA

Supplier's Site
Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron - 80AH6046 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron
80AH6046
Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron 80AH6046
DRAM, 128M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR2; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:1.875ns RoHS Compliant: Yes

DRAM, 128M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR2; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:1.875ns RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - EDB4432BBBJ-1DAAT-F-D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
EDB4432BBBJ-1DAAT-F-D
Memory EDB4432BBBJ-1DAAT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA

IC DRAM 4GBIT PARALLEL 134FBGA

Supplier's Site Datasheet
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB4432BBBJ-1DAAT-F-D
Integrated Circuits (ICs) - Memory - Memory EDB4432BBBJ-1DAAT-F-D
IC DRAM 4GBIT PARALLEL 134FBGA

IC DRAM 4GBIT PARALLEL 134FBGA

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. ODG (Origin Data Global) Newark, An Avnet Company Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 943158-EDB4432BBBJ-1DAAT-F-D 774-EDB4432BBBJ-1DAAT-F-D EDB4432BBBJ-1DAAT-F-D EDB4432BBBJ-1DAAT-F-D 80AH6046 EDB4432BBBJ-1DAAT-F-D EDB4432BBBJ-1DAAT-F-D
Product Name Memory - DDR - EDB4432BBBJ-1DAAT-F-D Memory IC and Storage Component Memory Memory Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip SDRAM - Mobile LPDDR2; DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F) -40 to 105 C (-40 to 221 F)
Package Type BGA; Tray BGA; 134-WFBGA 134-WFBGA WFBGA BGA
Supply Voltage 1.14V ~ 1.95V 1.14V ~ 1.95V 1.14V ~ 1.95V -40degC ~ 105degC (TC)
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