Win Source Part Number: 1229974-EDB4432BBBJ-
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel (TR)
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: SDRAM - Mobile LPDDR2
Memory Type: Volatile
Memory Size: 4Gb (128M x 32)
Voltage - Supply: 1.14V ~ 1.95V
Package / Case: 134-WFBGA
Supplier Device Package: 134-FBGA (10x11.5)
Temperature Range - Operating: -30°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 533 MHz
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: Micron Technology Inc.
Other Names: EDB4432BBBJ-1D-F-R TR,EDB4432BBBJ-1D-F-
Base Product Number: EDB4432
Product Status: Obsolete
IC DRAM 4GBIT PARALLEL 134FBGA Product overview: EDB4432BBBJ-1D-F-R from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-EDB4432BBBJ-1D-F
IC DRAM 4GBIT PARALLEL 134FBGA
SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 533 MHz 134-FBGA (10x11.5)
IC DRAM 4GBIT PARALLEL 134FBGA
IC DRAM 4GBIT PARALLEL 134FBGA
DRAM, 128M X 32BIT, -30 TO 85DEG C; DRAM Type:LPDDR2; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:533MHz; Memory Case Style:WFBGA; No. of Pins:134Pins; Supply Voltage Nom:1.2V; Access Time:1.875ns RoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 1229974-EDB4432BBBJ-1D-F-R | 774-EDB4432BBBJ-1D-F-R | EDB4432BBBJ-1D-F-R | EDB4432BBBJ-1D-F-R | EDB4432BBBJ-1D-F-R | EDB4432BBBJ-1D-F-R | 80AH6045 |
| Product Name | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 128M X 32Bit, -30 To 85Deg C; Dram Type Micron |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | SDRAM - Mobile LPDDR2; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Operating Temperature | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | -30 to 85 C (-22 to 185 F) | |||
| Supply Voltage | 1.14V ~ 1.95V | 1.14V ~ 1.95V | 1.14V ~ 1.95V | 1.14V ~ 1.95V | Surface Mount | ||
| Package Type | BGA; Tape & Reel (TR) | 134-WFBGA | BGA; 134-WFBGA | WFBGA |
