Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EDB4064B3PD-8D-F-D

Description
IC DRAM 4GBIT PARALLEL 240FBGA
Datasheet
Description
IC DRAM 4GBIT PARALLEL 240FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB4064B3PD-8D-F-D
Integrated Circuits (ICs) - Memory - Memory EDB4064B3PD-8D-F-D
IC DRAM 4GBIT PARALLEL 240FBGA

IC DRAM 4GBIT PARALLEL 240FBGA

Supplier's Site
IC DRAM 4GBIT PARALLEL 240FBGA

IC DRAM 4GBIT PARALLEL 240FBGA

Supplier's Site Datasheet
Memory - EDB4064B3PD-8D-F-D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 400 MHz 240-FBGA (14x14)

SDRAM - Mobile LPDDR2 Memory IC 4Gbit Parallel 400 MHz 240-FBGA (14x14)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EDB4064B3PD-8D-F-D EDB4064B3PD-8D-F-D EDB4064B3PD-8D-F-D
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Density 4000000 kbits 4000000 kbits 4000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - 71256S35TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 256 kbits
View Details
Controllers - NSBMC096VF-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type QFP; 132-BQFP Bumpered
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details