Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory EDB1316BDBH-1DIT-F-R TR

Description
IC DRAM 1GBIT PAR 134VFBGA
Datasheet
Description
IC DRAM 1GBIT PAR 134VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - EDB1316BDBH-1DIT-F-R TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
EDB1316BDBH-1DIT-F-R TR
Integrated Circuits (ICs) - Memory - Memory EDB1316BDBH-1DIT-F-R TR
IC DRAM 1GBIT PAR 134VFBGA

IC DRAM 1GBIT PAR 134VFBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 134VFBGA

IC DRAM 1GBIT PARALLEL 134VFBGA

Supplier's Site Datasheet
SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 533 MHz 134-VFBGA (10x11.5)

SDRAM - Mobile LPDDR2 Memory IC 1Gbit Parallel 533 MHz 134-VFBGA (10x11.5)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number EDB1316BDBH-1DIT-F-R TR EDB1316BDBH-1DIT-F-R TR EDB1316BDBH-1DIT-F-R TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 533 MHz
Density 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882723 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 256 k
Bits per Word 8 bits
View Details
Memory - 71016S12Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details