Micron Technology, Inc. Memory ECF620AAACN-C1-Y3-ES

Description
Memory IC
Datasheet
Description
Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - ECF620AAACN-C1-Y3-ES - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
ECF620AAACN-C1-Y3-ES
Integrated Circuits (ICs) - Memory - Memory ECF620AAACN-C1-Y3-ES
LPDDR3 6G DIE 192MX32

LPDDR3 6G DIE 192MX32

Supplier's Site
LPDDR3 6G DIE 192MX32

LPDDR3 6G DIE 192MX32

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number ECF620AAACN-C1-Y3-ES ECF620AAACN-C1-Y3-ES ECF620AAACN-C1-Y3-ES
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116LA45SOGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
 - LP3913SQ-AD/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - 5962F1120201QXA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
View Details
2 suppliers
5V Memory IC and Storage Component - 774-AS27C256-20JM - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers