Micron Technology, Inc. Memory ECF440AACCN-P2-Y3

Description
LPDDR3 4G DIE 128MX32
  • Memory - ECF440AACCN-P2-Y3 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - ECF440AACCN-P2-Y3 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
LPDDR3 4G DIE 128MX32
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - ECF440AACCN-P2-Y3 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
ECF440AACCN-P2-Y3
Memory ECF440AACCN-P2-Y3
LPDDR3 4G DIE 128MX32

LPDDR3 4G DIE 128MX32

Supplier's Site Datasheet
Memory - ECF440AACCN-P2-Y3 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
ECF440AACCN-P2-Y3
Memory ECF440AACCN-P2-Y3
Memory IC

Memory IC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number ECF440AACCN-P2-Y3 ECF440AACCN-P2-Y3
Product Name Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 51-30259Z01-A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
51-30259Z01-A
View Details
2 suppliers
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44400
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420770P
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
- 27S29DC - Rochester Electronics
Rochester Electronics
Memory
27S29DC
Specs
Memory Category PROM
Package Type DIP; CDIP
View Details
4 suppliers