Microchip Technology, Inc. Single FETs, MOSFETs VP3203N8-G

Description
MOSFET P-CH 30V 1.1A TO243AA
Request a Quote Datasheet
Description
MOSFET P-CH 30V 1.1A TO243AA
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP3203N8-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VP3203N8-G
Single FETs, MOSFETs VP3203N8-G
MOSFET P-CH 30V 1.1A TO243AA

MOSFET P-CH 30V 1.1A TO243AA

Supplier's Site Datasheet
Single FETs, MOSFETs - VP3203N8-GTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP3203N8-GTR-ND
Single FETs, MOSFETs VP3203N8-GTR-ND
P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - VP3203N8-GDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP3203N8-GDKR-ND
Single FETs, MOSFETs VP3203N8-GDKR-ND
P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
Single FETs, MOSFETs - VP3203N8-GCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP3203N8-GCT-ND
Single FETs, MOSFETs VP3203N8-GCT-ND
P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

P-Channel 30V 1.1A (Tj) 1.6W (Ta) Surface Mount TO-243AA (SOT-89)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP3203N8-G - 213881-VP3203N8-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP3203N8-G
213881-VP3203N8-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP3203N8-G 213881-VP3203N8-G
Manufacturer: Microchip Technology Win Source Part Number: 213881-VP3203N8-G Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-243AA (SOT-89) Dimension: TO-243AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 1.1A (Tj) Gate-Source Threshold Voltage: 3.5V @ 10mA Max Input Capacitance: 300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 600 mOhm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Microchip Technology
Win Source Part Number: 213881-VP3203N8-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-243AA (SOT-89)
Dimension: TO-243AA
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 1.1A (Tj)
Gate-Source Threshold Voltage: 3.5V @ 10mA
Max Input Capacitance: 300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 600 mOhm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP3203N8-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP3203N8-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP3203N8-G
MOSFET P-CH 30V 1.1A TO243AA

MOSFET P-CH 30V 1.1A TO243AA

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V 0.6Ohm

MOSFET 30V 0.6Ohm

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP3203N8-G VP3203N8-GTR-ND 213881-VP3203N8-G VP3203N8-G VP3203N8-G
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - VP3203N8-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel; P-Channel P-Channel P-Channel; P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts 30 volts
IDSS 1100 milliamps
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