Microchip Technology, Inc. Single FETs, MOSFETs VP2450N3-G

Description
P-Channel 500V 100mA (Tj) 740mW (Ta) Through Hole TO-92-3
Request a Quote Datasheet
Description
P-Channel 500V 100mA (Tj) 740mW (Ta) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP2450N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP2450N3-G-ND
Single FETs, MOSFETs VP2450N3-G-ND
P-Channel 500V 100mA (Tj) 740mW (Ta) Through Hole TO-92-3

P-Channel 500V 100mA (Tj) 740mW (Ta) Through Hole TO-92-3

Buy Now Datasheet
Singapore
500V 100MA MOSFET Transistor
278-VP2450N3-G
500V 100MA MOSFET Transistor 278-VP2450N3-G
MOSFET P-CH 500V 100MA TO92-3 Product overview: VP2450N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 100MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 100MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2450N3-G can be used for catalog matching and distributor lookup.

MOSFET P-CH 500V 100MA TO92-3 Product overview: VP2450N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 500V, 100MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 500V, 100MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2450N3-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FETs - Single - VP2450N3-G - 1279755-VP2450N3-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VP2450N3-G
1279755-VP2450N3-G
FETs - Single - VP2450N3-G 1279755-VP2450N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1279755-VP2450N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 740mW Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 100mA Rds On (Maximum) at Id, Vgs: 30Ohm at 100mA, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 190pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279755-VP2450N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 740mW
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 100mA
Rds On (Maximum) at Id, Vgs: 30Ohm at 100mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 190pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP2450N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP2450N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP2450N3-G
MOSFET P-CH 500V 100MA TO92-3

MOSFET P-CH 500V 100MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 30Ohm

MOSFET 500V 30Ohm

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP2450N3-G-ND 278-VP2450N3-G 1279755-VP2450N3-G VP2450N3-G VP2450N3-G
Product Name Single FETs, MOSFETs 500V 100MA MOSFET Transistor FETs - Single - VP2450N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) Bag TO-92; SOT3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 500 volts 500 volts
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