Microchip Technology, Inc. FETs - Single - VP2206N2 VP2206N2

Description
Manufacturer: Microchip Technology Win Source Part Number: 1279749-VP2206N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 750mA Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1279749-VP2206N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 750mA Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - VP2206N2 - 1279749-VP2206N2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VP2206N2
1279749-VP2206N2
FETs - Single - VP2206N2 1279749-VP2206N2
Manufacturer: Microchip Technology Win Source Part Number: 1279749-VP2206N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 750mA Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279749-VP2206N2
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Power Dissipation (Maximum): 360mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 750mA
Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

Buy Now
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Single FETs, MOSFETs
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P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP2206N2 - Shenzhen Shengyu Electronics Technology Limited
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP2206N2
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Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1279749-VP2206N2 VP2206N2-ND VP2206N2 VP2206N2
Product Name FETs - Single - VP2206N2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts
PD 360 milliwatts
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