Microchip Technology, Inc. Single FETs, MOSFETs VP2206N2

Description
P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39
Request a Quote Datasheet
Description
P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP2206N2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP2206N2-ND
Single FETs, MOSFETs VP2206N2-ND
P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39

P-Channel 60V 750mA (Tj) 360mW (Tc) Through Hole TO-39

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FETs - Single - VP2206N2 - 1279749-VP2206N2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VP2206N2
1279749-VP2206N2
FETs - Single - VP2206N2 1279749-VP2206N2
Manufacturer: Microchip Technology Win Source Part Number: 1279749-VP2206N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 750mA Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279749-VP2206N2
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Power Dissipation (Maximum): 360mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 750mA
Rds On (Maximum) at Id, Vgs: 900mOhm at 3.5A, 10V
Gate Source Voltage(th) (Maximum) at Id: 3.5V at 10mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 450pF at 25V

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Singapore, Singapore
60V 750MA MOSFET Transistor
278-VP2206N2
60V 750MA MOSFET Transistor 278-VP2206N2
MOSFET P-CH 60V 750MA TO39 Product overview: VP2206N2 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 750MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 750MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2206N2 can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 750MA TO39 Product overview: VP2206N2 from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 750MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 750MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VP2206N2 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP2206N2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP2206N2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP2206N2
MOSFET P-CH 60V 750MA TO39

MOSFET P-CH 60V 750MA TO39

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
VP2206N2
MOSFET VP2206N2
MOSFET 60V 0.9Ohm

MOSFET 60V 0.9Ohm

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Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP2206N2-ND 1279749-VP2206N2 278-VP2206N2 VP2206N2 VP2206N2
Product Name Single FETs, MOSFETs FETs - Single - VP2206N2 60V 750MA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel P-Channel
Package Type TO-3; TO-39; TO-205AD, TO-39-3 Metal Can TO-3; TO-39; SOT3 Bag TO-39; TO-39
MOSFET Operating Mode Enhancement Enhancement
V(BR)DSS 60 volts 60 volts
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