Microchip Technology, Inc. Single FETs, MOSFETs VP0550N3-G

Description
P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-92-3
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Description
P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VP0550N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VP0550N3-G-ND
Single FETs, MOSFETs VP0550N3-G-ND
P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-92-3

P-Channel 500V 54mA (Tj) 1W (Tc) Through Hole TO-92-3

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FETs - Single - VP0550N3-G - 1279735-VP0550N3-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VP0550N3-G
1279735-VP0550N3-G
FETs - Single - VP0550N3-G 1279735-VP0550N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1279735-VP0550N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: P-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 500V Id - Continuous Drain Current: 54mA Rds On (Maximum) at Id, Vgs: 125Ohm at 10mA, 10V Gate Source Voltage(th) (Maximum) at Id: 4.5V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 70pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279735-VP0550N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: P-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 500V
Id - Continuous Drain Current: 54mA
Rds On (Maximum) at Id, Vgs: 125Ohm at 10mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 4.5V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 70pF at 25V

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VP0550N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VP0550N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VP0550N3-G
MOSFET P-CH 500V 54MA TO92-3

MOSFET P-CH 500V 54MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 500V 125Ohm

MOSFET 500V 125Ohm

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number VP0550N3-G-ND 1279735-VP0550N3-G VP0550N3-G VP0550N3-G
Product Name Single FETs, MOSFETs FETs - Single - VP0550N3-G Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity P-Channel P-Channel; P-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3 TO-92; TO-226-3, TO-92-3 (TO-226AA)
MOSFET Operating Mode Enhancement
V(BR)DSS 500 volts
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