Microchip Technology, Inc. Single FETs, MOSFETs VN2210N3-G

Description
MOSFET N-CH 100V 1.2A TO92-3
Request a Quote Datasheet
Description
MOSFET N-CH 100V 1.2A TO92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VN2210N3-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VN2210N3-G
Single FETs, MOSFETs VN2210N3-G
MOSFET N-CH 100V 1.2A TO92-3

MOSFET N-CH 100V 1.2A TO92-3

Supplier's Site Datasheet
Singapore
100V 1.2A MOSFET Transistor
278-VN2210N3-G
100V 1.2A MOSFET Transistor 278-VN2210N3-G
MOSFET N-CH 100V 1.2A TO92-3 Product overview: VN2210N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN2210N3-G can be used for catalog matching and distributor lookup.

MOSFET N-CH 100V 1.2A TO92-3 Product overview: VN2210N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN2210N3-G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2210N3-G - 043618-VN2210N3-G - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2210N3-G
043618-VN2210N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2210N3-G 043618-VN2210N3-G
Manufacturer: Microchip Technology Win Source Part Number: 043618-VN2210N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 740mW (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 1.2A (Tj) Gate-Source Threshold Voltage: 2.4V @ 10mA Max Input Capacitance: 500pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 350 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Microchip Technology
Win Source Part Number: 043618-VN2210N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 740mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.2A (Tj)
Gate-Source Threshold Voltage: 2.4V @ 10mA
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - VN2210N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN2210N3-G-ND
Single FETs, MOSFETs VN2210N3-G-ND
N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3

N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 100V 0.35Ohm

MOSFET 100V 0.35Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2210N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN2210N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN2210N3-G
MOSFET N-CH 100V 1.2A TO92-3

MOSFET N-CH 100V 1.2A TO92-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number VN2210N3-G 278-VN2210N3-G 043618-VN2210N3-G VN2210N3-G-ND VN2210N3-G VN2210N3-G
Product Name Single FETs, MOSFETs 100V 1.2A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2210N3-G Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts 100 volts 100 volts
IDSS 1200 milliamps
PD 740 milliwatts 1 milliwatts 740 milliwatts
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