Manufacturer: Microchip Technology
Win Source Part Number: 043618-VN2210N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 740mW (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 1.2A (Tj)
Gate-Source Threshold Voltage: 2.4V @ 10mA
Max Input Capacitance: 500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 350 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
MOSFET N-CH 100V 1.2A TO92-3 Product overview: VN2210N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN2210N3-G can be used for catalog matching and distributor lookup.
N-Channel 100V 1.2A (Tj) 740mW (Tc) Through Hole TO-92-3
MOSFET N-CH 100V 1.2A TO92-3
MOSFET N-CH 100V 1.2A TO92-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 043618-VN2210N3-G | 278-VN2210N3-G | VN2210N3-G-ND | VN2210N3-G | VN2210N3-G | VN2210N3-G |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN2210N3-G | 100V 1.2A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||
| PD | 740 milliwatts | 1 milliwatts | 740 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-92; SOT3; TO-92-3 | Bag | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-226-3, TO-92-3 (TO-226AA) |
