Microchip Technology, Inc. FETs - Single - VN2210N2 VN2210N2

Description
Manufacturer: Microchip Technology Win Source Part Number: 1279474-VN2210N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.7A Rds On (Maximum) at Id, Vgs: 350mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V
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Description
Manufacturer: Microchip Technology Win Source Part Number: 1279474-VN2210N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.7A Rds On (Maximum) at Id, Vgs: 350mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V
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Suppliers

Company
Product
Description
Supplier Links
FETs - Single - VN2210N2 - 1279474-VN2210N2 - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VN2210N2
1279474-VN2210N2
FETs - Single - VN2210N2 1279474-VN2210N2
Manufacturer: Microchip Technology Win Source Part Number: 1279474-VN2210N2 Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-205AD, TO-39-3 Metal Can Power Dissipation (Maximum): 360mW Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 500 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 100V Id - Continuous Drain Current: 1.7A Rds On (Maximum) at Id, Vgs: 350mOhm at 4A, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 10mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279474-VN2210N2
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-39
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-205AD, TO-39-3 Metal Can
Power Dissipation (Maximum): 360mW
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 500
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 100V
Id - Continuous Drain Current: 1.7A
Rds On (Maximum) at Id, Vgs: 350mOhm at 4A, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 10mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 500pF at 25V

Buy Now
Single FETs, MOSFETs - VN2210N2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN2210N2-ND
Single FETs, MOSFETs VN2210N2-ND
N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39

N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole TO-39

Buy Now Datasheet
Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39 - 536-VN2210N2 - Utmel Electronic Limited
Hong Kong, China
Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39
536-VN2210N2
Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39 536-VN2210N2
Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39

Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2210N2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN2210N2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN2210N2
MOSFET N-CH 100V 1.7A TO39

MOSFET N-CH 100V 1.7A TO39

Supplier's Site
Sheung Wan, Hong Kong
MOSFET
VN2210N2
MOSFET VN2210N2
MOSFET 100V 0.35Ohm

MOSFET 100V 0.35Ohm

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1279474-VN2210N2 VN2210N2-ND 536-VN2210N2 VN2210N2 VN2210N2
Product Name FETs - Single - VN2210N2 Single FETs, MOSFETs Trans MOSFET N-CH 100V 1.7A 3-Pin TO-39 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
MOSFET Operating Mode Enhancement Enhancement; ENHANCEMENT MODE
V(BR)DSS 100 volts 100 volts
PD 360 milliwatts 6000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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