Microchip Technology, Inc. Single FETs, MOSFETs VN2106N3-G

Description
N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet
Description
N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - VN2106N3-G-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN2106N3-G-ND
Single FETs, MOSFETs VN2106N3-G-ND
N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
FETs - Single - VN2106N3-G - 1279469-VN2106N3-G - Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VN2106N3-G
1279469-VN2106N3-G
FETs - Single - VN2106N3-G 1279469-VN2106N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1279469-VN2106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 300mA Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279469-VN2106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 300mA
Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V

Buy Now
Single FETs, MOSFETs - VN2106N3-G - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VN2106N3-G
Single FETs, MOSFETs VN2106N3-G
MOSFET N-CH 60V 300MA TO92-3

MOSFET N-CH 60V 300MA TO92-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2106N3-G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN2106N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN2106N3-G
MOSFET N-CH 60V 300MA TO92-3

MOSFET N-CH 60V 300MA TO92-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 60V 4Ohm

MOSFET 60V 4Ohm

Buy Now Datasheet
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip - 55AC4282 - Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip
55AC4282
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip 55AC4282
D-MOSFET, N-CH, 0.3A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.3A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number VN2106N3-G-ND 1279469-VN2106N3-G VN2106N3-G VN2106N3-G VN2106N3-G 55AC4282
Product Name Single FETs, MOSFETs FETs - Single - VN2106N3-G Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3 TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-3; TO-92
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
PD 1000 milliwatts 1000 milliwatts
Unlock Full Specs
to access all available technical data