Manufacturer: Microchip Technology
Win Source Part Number: 1279469-VN2106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 300mA
Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V
MOSFET N-CH 60V 300MA TO92-3 Product overview: VN2106N3-G from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 300MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 300MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-VN2106N3-G can be used for catalog matching and distributor lookup.
N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3
MOSFET N-CH 60V 300MA TO92-3
D-MOSFET, N-CH, 0.3A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
MOSFET N-CH 60V 300MA TO92-3
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1279469-VN2106N3-G | 278-VN2106N3-G | VN2106N3-G-ND | VN2106N3-G | VN2106N3-G | 55AC4282 | VN2106N3-G |
| Product Name | FETs - Single - VN2106N3-G | 60V 300MA MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | Enhancement | |||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts | ||||
| PD | 1000 milliwatts | 1 milliwatts | 1000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
