Microchip Technology, Inc. FETs - Single - VN2106N3-G VN2106N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 1279469-VN2106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 300mA Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V
  • FETs - Single - VN2106N3-G - 1279469-VN2106N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - VN2106N3-G-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - VN2106N3-G - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip - 55AC4282 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2106N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 1279469-VN2106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 300mA Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FETs - Single - VN2106N3-G - 1279469-VN2106N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
FETs - Single - VN2106N3-G
1279469-VN2106N3-G
FETs - Single - VN2106N3-G 1279469-VN2106N3-G
Manufacturer: Microchip Technology Win Source Part Number: 1279469-VN2106N3-G Packaging: Bulk Mounting Style: Through Hole Technology: MOSFET Transistor Polarity: N-Channel Categories: Discrete Semiconductor Products Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Temperature Range - Operating: -55°C ~ 150°C Manufacturer Homepage: www.supertex.com Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA) Power Dissipation (Maximum): 1W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vds - Drain-Source Breakdown Voltage: 60V Id - Continuous Drain Current: 300mA Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA Gate Source Voltage (Maximum): ±20V Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V

Manufacturer: Microchip Technology
Win Source Part Number: 1279469-VN2106N3-G
Packaging: Bulk
Mounting Style: Through Hole
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Homepage: www.supertex.com
Manufacturer Package: TO-226-3, TO-92-3 (TO-226AA)
Power Dissipation (Maximum): 1W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 60V
Id - Continuous Drain Current: 300mA
Rds On (Maximum) at Id, Vgs: 4Ohm at 500mA, 10V
Gate Source Voltage(th) (Maximum) at Id: 2.4V at 1mA
Gate Source Voltage (Maximum): ±20V
Input Capacitance (Ciss) (Maximum) at Vds: 50pF at 25V

Buy Now
Single FETs, MOSFETs - VN2106N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN2106N3-G-ND
Single FETs, MOSFETs VN2106N3-G-ND
N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 60V 300mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
Single FETs, MOSFETs - VN2106N3-G - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
VN2106N3-G
Single FETs, MOSFETs VN2106N3-G
MOSFET N-CH 60V 300MA TO92-3

MOSFET N-CH 60V 300MA TO92-3

Supplier's Site Datasheet
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip - 55AC4282 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip
55AC4282
D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip 55AC4282
D-MOSFET, N-CH, 0.3A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

D-MOSFET, N-CH, 0.3A, 60V, TO-92-3; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
VN2106N3-G
MOSFET VN2106N3-G
MOSFET 60V 4Ohm

MOSFET 60V 4Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN2106N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN2106N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN2106N3-G
MOSFET N-CH 60V 300MA TO92-3

MOSFET N-CH 60V 300MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1279469-VN2106N3-G VN2106N3-G-ND VN2106N3-G 55AC4282 VN2106N3-G VN2106N3-G
Product Name FETs - Single - VN2106N3-G Single FETs, MOSFETs Single FETs, MOSFETs D-Mosfet, N-Ch, 0.3A, 60V, To-92-3; Transistor Polarity Microchip MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 60 volts 60 volts
PD 1000 milliwatts 1000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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