Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G VN0550N3-G

Description
Manufacturer: Microchip Technology Win Source Part Number: 036410-VN0550N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 50mA (Tj) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 55pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G - 036410-VN0550N3-G - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - VN0550N3-G-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN0550N3-G - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Microchip Technology Win Source Part Number: 036410-VN0550N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 50mA (Tj) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 55pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G - 036410-VN0550N3-G - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G
036410-VN0550N3-G
TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G 036410-VN0550N3-G
Manufacturer: Microchip Technology Win Source Part Number: 036410-VN0550N3-G Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92-3 Dimension: TO-226-3, TO-92-3 (TO-226AA) Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 50mA (Tj) Gate-Source Threshold Voltage: 4V @ 1mA Max Input Capacitance: 55pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 Ohm @ 50mA, 10V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Microchip Technology
Win Source Part Number: 036410-VN0550N3-G
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Dimension: TO-226-3, TO-92-3 (TO-226AA)
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 50mA (Tj)
Gate-Source Threshold Voltage: 4V @ 1mA
Max Input Capacitance: 55pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 Ohm @ 50mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - VN0550N3-G-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
VN0550N3-G-ND
Single FETs, MOSFETs VN0550N3-G-ND
N-Channel 500V 50mA (Tj) 1W (Tc) Through Hole TO-92-3

N-Channel 500V 50mA (Tj) 1W (Tc) Through Hole TO-92-3

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
VN0550N3-G
MOSFET VN0550N3-G
MOSFET 500V 60Ohm

MOSFET 500V 60Ohm

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - VN0550N3-G - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
VN0550N3-G
Discrete Semiconductor Products - Transistors - FETs, MOSFETs VN0550N3-G
MOSFET N-CH 500V 50MA TO92-3

MOSFET N-CH 500V 50MA TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 036410-VN0550N3-G VN0550N3-G-ND VN0550N3-G VN0550N3-G
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - VN0550N3-G Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts
PD 1000 milliwatts
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