Microchip Technology, Inc. RF PIN Diode UM4001CR

Description
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
Request a Quote
Description
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - UM4001CR - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
UM4001CR
RF PIN Diode UM4001CR
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.

The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.

Supplier's Site
Discrete Semiconductor Products - Diodes - RF Diodes - UM4001CR - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
UM4001CR
Discrete Semiconductor Products - Diodes - RF Diodes UM4001CR
SI PPIN HERMETIC STUD

SI PPIN HERMETIC STUD

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Diodes RF Diodes
Product Number UM4001CR UM4001CR
Product Name RF PIN Diode Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single
Unlock Full Specs
to access all available technical data