Microchip Technology, Inc. RF PIN Diode UM4001B-TR

Description
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
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Description
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.
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RF PIN Diode - UM4001B-TR - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
UM4001B-TR
RF PIN Diode UM4001B-TR
The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.

The UM4000 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 series have higher power ratings due to a shorter thermal path between the chip and package. High charge storage and long carrier lifetime enable high RF levels to be controlled with relatively low bias current. Similarly, peak RF voltages can be handled well in excess of applied reverse bias voltage.

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Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number UM4001B-TR
Product Name RF PIN Diode
Configuration Single
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